Carbon Nanotube Transistor Circuits: Circuit-Level Performance Benchmarking and Design Options for Living with Imperfections

Carbon Nanotube Transistor Circuits: Circuit-Level Performance Benchmarking and Design Options for Living with Imperfections

1D carbon nanotube FET (CNFET)-based circuits offer 4.6times faster FO4 speed and 12times energy-delay product improvement over 32nm node Si CMOS (including diameter and doping variations), provided circuits can be built that are immune to misaligned and metallic nanotubes. A design technique that g...

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Bibliographische Detailangaben
Hauptverfasser: Deng, Jie, Patil, Nishant, Ryu, Koungmin, Badmaev, Alexander, Zhou, Chongwu, Mitra, Subhasish, Wong, H-S. Philip
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Carbon nanotubes
Circuit synthesis
CMOS process
Delay
Doping
Inverters
Logic circuits
Logic functions
Testing
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Beschreibung
Zusammenfassung:1D carbon nanotube FET (CNFET)-based circuits offer 4.6times faster FO4 speed and 12times energy-delay product improvement over 32nm node Si CMOS (including diameter and doping variations), provided circuits can be built that are immune to misaligned and metallic nanotubes. A design technique that guarantees correct logic operation in the presence of misaligned nanotubes is also presented.
ISSN:0193-6530
2376-8606
DOI:10.1109/ISSCC.2007.373592