Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Implementation of Robust Nickel Alloy Salicide Process for High-Performance 65nm SOI CMOS Manufacturing

Addition of Pt to Ni silicide produces a robust [Ni x Pt (1-x) ]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi 2 and significant variations in monosilicide texture without degrading the device performance or...

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Hauptverfasser: Strane, J., Brown, D., Lavoie, C., Suenaga, J., Haran, B., Press, P., Besser, P., Flaitz, P., Gribelyuk, M., Kammler, T., Peidous, I., Huajie Chen, Waidmann, S., Frye, A., DeHaven, P., Domenicucci, A., Murray, C., Knarr, R., Engelmann, H.J., Streck, C., Kahlert, V., Deshpande, S., Leobandung, E., Pellerin, J., Jagannathan, J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS process
CMOS technology
Degradation
Germanium silicon alloys
Manufacturing processes
Nickel alloys
Robust stability
Robustness
Silicides
Silicon germanium
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Zusammenfassung:Addition of Pt to Ni silicide produces a robust [Ni x Pt (1-x) ]Si, which shows an improved morphological stability, an important reduction in encroachment defect density, a reduced tendency to form NiSi 2 and significant variations in monosilicide texture without degrading the device performance or the yield of high-performance 65 nm SOI technologies.
ISSN:1524-766X
2690-8174
DOI:10.1109/VTSA.2007.378955