Evaluation of S/D Resistance (RSD) and Strain Scalability by Mechanical-bending Approach

A simple yet effective approach for the extraction of source/drain (S/D) series resistance R SD using mechanical four-point bending is presented. This new approach can be used to extract the R SD of each device disregarding its channel length. According to the results, the benefits of R SD reduction become more prominent in shorter channel devices. Further analysis reveals that the strain-induced enhancement is suppressed in shorter channel devices than longer channel ones due to higher channel doping necessitated by short-channel control.