Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology

Characterization of Silicided Polysilicon Fuse Implemented in 65nm Logic CMOS Technology

NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was...

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Bibliographische Detailangaben
Hauptverfasser: Im, J., Boon Ang, Tumakha, S., Sunhom Paak
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Application specific integrated circuits
Circuit testing
CMOS logic
CMOS logic circuits
CMOS technology
eFUSE
Electromigration
Fuses
Geometry
Logic devices
NiSi
NVM
OTP
poly fuse
Silicides
Temperature
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Beschreibung
Zusammenfassung:NiSi electrically programmable fuses (eFUSE) were fabricated and investigated using 65 nm logic CMOS technology. The optimization of fuse program was achieved by analyzing electrical and physical responses of fuse bits for various conditions. Controlled electromigration of Ni during fuse program was identified as a key factor in achieving reliably high post-program fuse resistance.
DOI:10.1109/NVMT.2006.378877