Novel Positive Bias Temperature Instability (PBTI) of N-Channel Mosfets with Plasma Nitrided Oxide

Novel Positive Bias Temperature Instability (PBTI) of N-Channel Mosfets with Plasma Nitrided Oxide

This work reports for the first time a new positive bias temperature instability (PBTI) degradation mode in n-channel MOSFETs related to the introduction of plasma nitridation process step. The degradation is explained only by interface traps creation, differently to NBTI on p-channel MOSFETs where...

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Bibliographische Detailangaben
Hauptverfasser: Huard, V., Guerin, C., Parthasarathy, C.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Degradation
Doping
MOSFETs
Niobium compounds
Nitrogen
Plasma temperature
Ring oscillators
Stress
Titanium compounds
Voltage
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Beschreibung
Zusammenfassung:This work reports for the first time a new positive bias temperature instability (PBTI) degradation mode in n-channel MOSFETs related to the introduction of plasma nitridation process step. The degradation is explained only by interface traps creation, differently to NBTI on p-channel MOSFETs where hole trapping might be dominant
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369570