High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices

High pressure deuterium annealing was applied to nano-scale strained CMOS devices and its effect was characterized in terms of charge pumping, hot carrier, NBTI and DNBTI stress, and normalized drain current noise spectral density for the first time. The characteristics of tensile stressed NMOS devi...

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Hauptverfasser:	Sung-Man Cho, Jeong-Hyun Lee, Chang, M., Jo, M.-S., Hwang, H.-S., Lee, J.-K., Hwang, S.-B., Jong-Ho Lee
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Charge pumps Compressive stress Deuterium Hot carriers MOS devices Nanoscale devices Niobium compounds Tensile stress Titanium compounds
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creator	Sung-Man Cho Jeong-Hyun Lee Chang, M. Jo, M.-S. Hwang, H.-S. Lee, J.-K. Hwang, S.-B. Jong-Ho Lee
description	High pressure deuterium annealing was applied to nano-scale strained CMOS devices and its effect was characterized in terms of charge pumping, hot carrier, NBTI and DNBTI stress, and normalized drain current noise spectral density for the first time. The characteristics of tensile stressed NMOS devices were improved by the annealing. But for PMOS, especially compressive stressed devices showed degraded characteristics by the annealing.
doi_str_mv	10.1109/RELPHY.2007.369564
format	Conference Proceeding
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source	IEEE Electronic Library (IEL) Conference Proceedings
subjects	Annealing Charge pumps Compressive stress Deuterium Hot carriers MOS devices Nanoscale devices Niobium compounds Tensile stress Titanium compounds
title	High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices
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