High Pressure Deuterium Annealing Effect on Nano-Scale Strained CMOS Devices

High pressure deuterium annealing was applied to nano-scale strained CMOS devices and its effect was characterized in terms of charge pumping, hot carrier, NBTI and DNBTI stress, and normalized drain current noise spectral density for the first time. The characteristics of tensile stressed NMOS devices were improved by the annealing. But for PMOS, especially compressive stressed devices showed degraded characteristics by the annealing.