Improving the Endurance Characteristics Through Boron Implant at Active Edge in 1 G NAND Flash

Improving the Endurance Characteristics Through Boron Implant at Active Edge in 1 G NAND Flash

One of the most important issues of NAND flash memory is reliability problems caused by oxide and interface traps. But it has been revealed that their generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel width of shallow trench isolation (STI) isolated NA...

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Hauptverfasser: Daewoong Kang, Sungnam Chang, Seunggun Seo, Yongwook Song, Hojin Yoon, Eunjung Lee, Dongwon Chang, Wonseong Lee, Byung-Gook Park, Jong Duk Lee, Il Han Park, Sangwoo Kang, Hyungcheol Shin
Format: Tagungsbericht
Sprache:eng
Schlagworte:
bake retentioin
Boron
Capacitance
Degradation
Doping
Dry etching
electric field
endurance
Equations
Implants
Nonvolatile memory
Random access memory
trap
Voltage
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Beschreibung
Zusammenfassung:One of the most important issues of NAND flash memory is reliability problems caused by oxide and interface traps. But it has been revealed that their generation rate increases by Fowler-Nordheim current stressing on the tunnel oxide as the channel width of shallow trench isolation (STI) isolated NAND flash cells shrinks and electric field is increased at active edge of STI profile. By adjusting the boron doping of active edge, we decrease not only the electric field but also the trap generation. Also we confirmed the improvement of endurance and bake retention characteristics.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369996