An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies

An Insight into the High Current ESD Behavior of Drain Extended NMOS (DENMOS) Devices in Nanometer Scale CMOS Technologies

Second breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phe...

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Hauptverfasser: Chatterjee, Amitabh, Pendharkar, Sameer, Lin, Yen-Yi, Duvvury, Charvaka, Banerjee, Kaustav
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Current density
Electric breakdown
Electrostatic discharge
MOS devices
Nanoscale devices
Resistors
Silicon
Stress
Voltage
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Zusammenfassung:Second breakdown phenomenon (It2) in drain extended NMOS (DENMOS) which is associated with complex triggering of the parasitic BJT is relatively less understood. We present experiments and models to understand the physics of snapback in DENMOS in nanometer scale technologies. Avalanche injection phenomenon at the drain contact has been analyzed for a 90 nm DENMOS transistor under high current stressing
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369974