The Current Understanding of the Trap Generation Mechanisms that Lead to the Power Law Model for Gate Dielectric Breakdown

This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a po...

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Hauptverfasser: Nicollian, P.E., Krishnan, A.T., Chancellor, C.A., Khamankar, R.B., Chakravarthi, S., Bowen, C., Reddy, V.K.
Format: Tagungsbericht
Sprache:eng
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Beschreibung
Zusammenfassung:This paper reviews recent experiments that have shown that the probable mechanism for low voltage trap generation and dielectric breakdown is anode hydrogen release. Vibrational excitation of silicon-hydrogen bonds is the process that provides the most plausible explanation for the existence of a power law model for TDDB.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369892