Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications
The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during a...
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| creator | Jung-Geun Jee WookHyun Kwon Woong Lee Jung-Hyun Park Hyeong-Ki Kim Ho-Min Son Won-Jun Chang Jae-Jong Han Yong-Woo Hyung Hyeon-Deok Lee |
| description | The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively. |
| doi_str_mv | 10.1109/RELPHY.2007.369890 |
| format | Conference Proceeding |
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Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.</abstract><pub>IEEE</pub><doi>10.1109/RELPHY.2007.369890</doi><tpages>6</tpages></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1541-7026 |
| ispartof | 2007 IEEE International Reliability Physics Symposium Proceedings. 45th Annual, 2007, p.184-189 |
| issn | 1541-7026 1938-1891 |
| language | eng |
| recordid | cdi_ieee_primary_4227631 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Bonding Degradation Flash memory Hydrogen Nitrogen Oxidation Research and development Thermal stresses Threshold voltage |
| title | Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications |
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