Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications

Development and Optimization of Re-Oxidized Tunnel Oxide with Nitrogen Incorporation for the Flash Memory Applications

The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during a...

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Hauptverfasser: Jung-Geun Jee, WookHyun Kwon, Woong Lee, Jung-Hyun Park, Hyeong-Ki Kim, Ho-Min Son, Won-Jun Chang, Jae-Jong Han, Yong-Woo Hyung, Hyeon-Deok Lee
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Bonding
Degradation
Flash memory
Hydrogen
Nitrogen
Oxidation
Research and development
Thermal stresses
Threshold voltage
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Beschreibung
Zusammenfassung:The reliability properties of NOR flash memory with 65nm node being developed in Samsung electronics are greatly improved by using the newly proposed re-oxidized tunnel oxide. Especially, by optimizing the process variables such as the re-oxidation thickness/time, the partial pressure of NO during annealing, and the kinds of re-oxidizing materials, the Vth shifts post cycling and after post-cycling bake were decreased to the level of 28% and 42% of conventional NO annealed tunnel oxide, respectively.
ISSN:1541-7026
1938-1891
DOI:10.1109/RELPHY.2007.369890