Thermal Controllability of High Temperature (>1400°C) Rapid Thermal Oxidation for SiC MOSFET

Thermal Controllability of High Temperature (>1400°C) Rapid Thermal Oxidation for SiC MOSFET

Effective NO passivation annealing for SiC MOSFET with extreme high temperature (>1400degC) at cold-wall oxidation furnace has been developed by AIST group. For this newly developed process, the thermal distribution and chemical reaction in the reactor are studied by computational numerical analy...

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Bibliographische Detailangaben
Hauptverfasser: Ogata, S., Oka, T., Tsuda, K., Nakayama, T., Kosugi, R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Chemical analysis
Controllability
Furnaces
MOSFET circuits
Oxidation
Passivation
Rapid thermal annealing
Rapid thermal processing
Silicon carbide
Temperature
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Zusammenfassung:Effective NO passivation annealing for SiC MOSFET with extreme high temperature (>1400degC) at cold-wall oxidation furnace has been developed by AIST group. For this newly developed process, the thermal distribution and chemical reaction in the reactor are studied by computational numerical analysis. By comparing the experimental process and the simulated results, the spatial distribution of N atom on the wafer is suggested to be the key technology of nitridation process of SiO 2 /SiC interface
ISSN:1944-0251
1944-026X
DOI:10.1109/RTP.2006.367994