Fabrication of ZnTe Epilayers for Terahertz Devices Applications

Fabrication of ZnTe Epilayers for Terahertz Devices Applications

ZnTe crystals were grown on sapphire substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. It was found that epitaxial ZnTe layers can be obtained on sapphire substrates. High bandwidth up to 40 THz emission signal was clearly observed from t...

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Bibliographische Detailangaben
Hauptverfasser: Qixin Guo, Kume, Y., Fukuhara, Y., Tanaka, T., Nishio, M., Ogawa, H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Bandwidth
Crystalline materials
Crystals
Epitaxial growth
Epitaxial layers
Fabrication
Inorganic materials
Submillimeter wave devices
Substrates
Zinc compounds
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Zusammenfassung:ZnTe crystals were grown on sapphire substrates by metalorganic vapor phase epitaxy using dimethylzinc and diethyltelluride as the source materials. It was found that epitaxial ZnTe layers can be obtained on sapphire substrates. High bandwidth up to 40 THz emission signal was clearly observed from the ZnTe epitaxial layers.
ISSN:2162-2027
DOI:10.1109/ICIMW.2006.368661