Mechanical Characterization of III-V Nanowire Using Molecular Dynamics Simulation

Mechanical Characterization of III-V Nanowire Using Molecular Dynamics Simulation

Mechanical stiffness and density of III-V (GaAs) nanowire (NW) are studied by atomistic simulation in the , and directions. Series of molecular models are established and mechanical characteristics of the crystal orientations are considered. The simulation results indicate that the NW exhibits highe...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Dawotola, A.W., Yuan, C.A., van Driel, W.D., Bakkers, E.P.A., Zhang, G.Q.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Computational modeling
Energy states
Equations
Gallium arsenide
III-V semiconductor materials
Potential energy
Scanning electron microscopy
Semiconductor materials
Transmission electron microscopy
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:Mechanical stiffness and density of III-V (GaAs) nanowire (NW) are studied by atomistic simulation in the , and directions. Series of molecular models are established and mechanical characteristics of the crystal orientations are considered. The simulation results indicate that the NW exhibits highest structural stiffness in the direction. We also found that GaAs NW exhibits mechanical linearity under 2 GPa stress. Moreover, a qualitative comparison of simulation and other calculated results is carried out, and a good agreement is established.
DOI:10.1109/ESIME.2007.360037