Effect of Variation of Resistivity and Antenna Distance on Integrated Antenna System in Silicon

Effect of Variation of Resistivity and Antenna Distance on Integrated Antenna System in Silicon

This work is an investigation to the changes in antenna transmission co-efficient with the change in resistivity of the Si substrate and inter-antenna distance. The antennas were fabricated on Si wafer and the excitation was applied horizontally. The simulation data was obtained from the forward tra...

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Bibliographische Detailangaben
Hauptverfasser: Sultana, N., Rashid, A.B.M.H., Khan, M.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analytical models
Clocks
Conductivity
DH-HEMTs
Dipole antennas
Integrated circuit interconnections
Radio frequency
Silicon
Transmitting antennas
Ultra large scale integration
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Beschreibung
Zusammenfassung:This work is an investigation to the changes in antenna transmission co-efficient with the change in resistivity of the Si substrate and inter-antenna distance. The antennas were fabricated on Si wafer and the excitation was applied horizontally. The simulation data was obtained from the forward transmission gain using the HFSS program of ANSOFT and an analytical model has been developed using Friis Formula to fit the simulation results. The analytical results show good agreement with the simulated results.
DOI:10.1109/ICECE.2006.355691