Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit

Efficiency improvement of LDMOS transistors for base stations: towards the theoretical limit

The paper presents the evolution in LDMOST technology of the last decade, leading to a present 32 percent efficiency value for a two carrier W-CDMA signal with -37dBc IM3 and discusses future prospects to increase the performance even further. The achieved reduction of parasitic elements currently o...

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Bibliographische Detailangaben
Hauptverfasser: van Rijs, F., Theeuwen, S.J.C.H.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Base stations
Broadband amplifiers
Continuous improvement
Lead compounds
Linearity
Multiaccess communication
Performance gain
Power amplifiers
Radio frequency
Radiofrequency amplifiers
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Beschreibung
Zusammenfassung:The paper presents the evolution in LDMOST technology of the last decade, leading to a present 32 percent efficiency value for a two carrier W-CDMA signal with -37dBc IM3 and discusses future prospects to increase the performance even further. The achieved reduction of parasitic elements currently opens the way for system concepts such as high efficiency classes and Doherty type concepts
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346998