Erase mechanism for copper oxide resistive switching memory cells with nickel electrode

Erase mechanism for copper oxide resistive switching memory cells with nickel electrode

A metal-insulator-metal (MIM) device based on a Cu 2 O insulator has electrical characteristics significantly dependent on the oxide to top electrode (TE) interface. Cu/Cu 2 O/TE devices with various top electrodes have different thermal release characteristics, related to trap depth. The behavior o...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tzu-Ning Fang, Kaza, S., Haddad, S., An Chen, Yi-Ching Wu, Zhida Lan, Avanzino, S., Dongxiang Liao, Gopalan, C., Seungmoo Choi, Mahdavi, S., Buynoski, M., Lin, Y., Marrian, C., Bill, C., VanBuskirk, M., Taguchi, M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Communication switching
Copper
Electrodes
Heating
Nickel
Pulse measurements
Tellurium
Temperature dependence
Thermal resistance
Voltage
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A metal-insulator-metal (MIM) device based on a Cu 2 O insulator has electrical characteristics significantly dependent on the oxide to top electrode (TE) interface. Cu/Cu 2 O/TE devices with various top electrodes have different thermal release characteristics, related to trap depth. The behavior of the device during erase with Ni and Ti top electrodes suggests different mechanisms. This paper focuses on Cu/Cu 2 O/Ni devices and proposes a thermal erase model, based on power calculations and temperature dependence
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346731