Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Fully functional 512Mb PRAM with 0.047mum 2 (5.8F 2 ) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2 Sb 2 Te 5 . The 512Mb P...

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Bibliographische Detailangaben

Hauptverfasser:	Oh, J.H., Park, J.H., Lim, Y.S., Lim, H.S., Oh, Y.T., Kim, J.S., Shin, J.M., Song, Y.J., Ryoo, K.C., Lim, D.W., Park, S.S., Kim, J.I., Kim, J.H., Yu, J., Yeung, F., Jeong, C.W., Kong, J.H., Kang, D.H., Koh, G.H., Jeong, G.T., Jeong, H.S., Kinam Kim
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Contact resistance Electrodes Etching Manufacturing MOSFET circuits Phase change random access memory Semiconductor diodes Switches Switching circuits Voltage
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