Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Full Integration of Highly Manufacturable 512Mb PRAM based on 90nm Technology

Fully functional 512Mb PRAM with 0.047mum 2 (5.8F 2 ) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2 Sb 2 Te 5 . The 512Mb P...

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Hauptverfasser: Oh, J.H., Park, J.H., Lim, Y.S., Lim, H.S., Oh, Y.T., Kim, J.S., Shin, J.M., Song, Y.J., Ryoo, K.C., Lim, D.W., Park, S.S., Kim, J.I., Kim, J.H., Yu, J., Yeung, F., Jeong, C.W., Kong, J.H., Kang, D.H., Koh, G.H., Jeong, G.T., Jeong, H.S., Kinam Kim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Contact resistance
Electrodes
Etching
Manufacturing
MOSFET circuits
Phase change random access memory
Semiconductor diodes
Switches
Switching circuits
Voltage
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Zusammenfassung:Fully functional 512Mb PRAM with 0.047mum 2 (5.8F 2 ) cell size was successfully fabricated using 90nm diode technology in which the authors developed novel process schemes such as vertical diode as cell switch, self-aligned bottom electrode contact scheme, and line-type Ge 2 Sb 2 Te 5 . The 512Mb PRAM showed excellent electrical properties of sufficiently large on-current and stable phase transition behavior. The reliability of the 512Mb chip was also evaluated as a write-endurance over 1E5 cycles and a data retention time over 10 years at 85degC
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346905