Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

Highly Manufacturable 32Gb Multi -- Level NAND Flash Memory with 0.0098 μm2 Cell Size using TANOS(Si - Oxide - Al2O3 - TaN) Cell Technology

A highly manufacturable 32Gb multi-level NAND flash memory with 0.0098 μm 2 cell size using 40nm TANOS cell technologies has been successfully developed for the first time. The main key technologies of 40nm 32Gb NAND flash are advanced high N.A immersion photolithography with off-axis illumination s...

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Bibliographische Detailangaben
Hauptverfasser: Youngwoo Park, Jungdal Choi, Changseok Kang, Changhyun Lee, Yuchoel Shin, Bonghyn Choi, Juhung Kim, Sanghun Jeon, Jongsun Sel, Jintaek Park, Kihwan Choi, Taehwa Yoo, Jaesung Sim, Kinam Kim
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum oxide
Atherosclerosis
Delay lines
Flash memory
Lighting
Lithography
Manufacturing
Silicon compounds
Threshold voltage
Tungsten
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Beschreibung
Zusammenfassung:A highly manufacturable 32Gb multi-level NAND flash memory with 0.0098 μm 2 cell size using 40nm TANOS cell technologies has been successfully developed for the first time. The main key technologies of 40nm 32Gb NAND flash are advanced high N.A immersion photolithography with off-axis illumination system, advanced blocking oxide of the TANOS cell, and PVD tungsten and flowable oxide for bit line
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346900