Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

Unexpected mobility degradation for very short devices : A new challenge for CMOS scaling

A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be...

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Bibliographische Detailangaben
Hauptverfasser: Cros, A., Romanjek, K., Fleury, D., Harrison, S., Cerutti, R., Coronel, P., Dumont, B., Pouydebasque, A., Wacquez, R., Duriez, B., Gwoziecki, R., Boeuf, F., Brut, H., Ghibaudo, G., Skotnicki, T.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
Degradation
Doping
Electron mobility
Implants
Magnetic field measurement
MOSFETs
Performance evaluation
Scattering
Temperature
Thin film transistors
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Beschreibung
Zusammenfassung:A new mobility degradation specific to short channel MOSFETs is studied and elucidated. Pocket implants/dopants pile-up, interface states/oxide charges, remote Coulomb scattering or ballisticity are insufficient to explain this degradation. The role of non-Coulombian (neutral) defects, which can be healed by increasing the annealing temperature, is evidenced
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346872