A New Device Phenomenon in Cryogenically-Operated SiGe HBTs

A New Device Phenomenon in Cryogenically-Operated SiGe HBTs

A new negative differential resistance (NDR) effect is reported for the first time in cryogenically-operated SiGe HBTs. A physical explanation based on heterojunction barrier effect (HBE) is presented, and confirmed using calibrated 2-D TCAD simulations. The ac consequences of this NDR effect and th...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Jiahui Yuan, Chendong Zhu, Yan Cui, Cressler, J.D., Guofu Niu, Qingqing Liang, Enhai Zhao, Appaswamy, A., Krithivasan, R., Joseph, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Charge carrier processes
Cryogenics
Drives
Electrons
Germanium silicon alloys
Heterojunction bipolar transistors
Microelectronics
Silicon germanium
Space technology
Temperature
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A new negative differential resistance (NDR) effect is reported for the first time in cryogenically-operated SiGe HBTs. A physical explanation based on heterojunction barrier effect (HBE) is presented, and confirmed using calibrated 2-D TCAD simulations. The ac consequences of this NDR effect and the impact of technology scaling on the phenomenon are also addressed
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346857