High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers

This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density

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Bibliographische Detailangaben
Hauptverfasser: Moon, J.S., Wong, D., Antcliffe, M., Hashimoto, P., Hu, M., Willadsen, P., Micovic, M., Moyer, H.P., Kurdoghlian, A., MacDonald, P., Wetzel, M., Bowen, R.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346801