High PAE 1mm AlGaN/GaN HEMTs for 20 W and 43% PAE X-band MMIC Amplifiers
This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density
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Hauptverfasser: | , , , , , , , , , , , |
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Format: | Tagungsbericht |
Sprache: | eng |
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Zusammenfassung: | This work represents state-of-the-art performances of both large gateperiphery discrete GaN HEMTs devices and its application toward GaN MMICs amplifiers with state-of-the-art performances in simultaneous output power, PAE, and MMIC power density |
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ISSN: | 0163-1918 2156-017X |
DOI: | 10.1109/IEDM.2006.346801 |