Design and Optimization of nanoCMOS devices using predictive atomistic physics-based process modeling

Design and Optimization of nanoCMOS devices using predictive atomistic physics-based process modeling

For the first time, this work shows that the design and optimization of nanoCMOS devices can be achieved from atomistic physics-based process modeling. Remarkable prediction of device characteristics can be obtained even for novel co-implant processes. This extends the strength of TCAD in manufactur...

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Hauptverfasser: Colombeau, B., Mok, K.R.C., Yeong, S.H., Benistant, F., Indajang, B., Tan, O., Yang, B., Li, Y., Jaraiz, M., Cowern, N.E.B., Chu, S.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Boron
CMOS technology
Design optimization
Electronics industry
Manufacturing industries
Nanoscale devices
Predictive models
Pulp manufacturing
Semiconductor device manufacture
Simulated annealing
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Beschreibung
Zusammenfassung:For the first time, this work shows that the design and optimization of nanoCMOS devices can be achieved from atomistic physics-based process modeling. Remarkable prediction of device characteristics can be obtained even for novel co-implant processes. This extends the strength of TCAD in manufacturing for future generations of nanoCMOS devices.
ISSN:0163-1918
2156-017X
DOI:10.1109/IEDM.2006.346790