A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length
In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, however, face a challenge as a need for a shunt capacit...
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| Veröffentlicht in: | IEEE transactions on microwave theory and techniques 2007-04, Vol.55 (4), p.709-714 |
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| creator | Asahara, M. Campbell, C.F. Frensley, W.R. |
| description | In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, however, face a challenge as a need for a shunt capacitor application arises. This paper is a solution provider, ushering in a new approach to modeling a shunt capacitor of large electrical length over grounding substrate vias. Our model is derived from a set of design equations that allows asymmetric coupled lines in an inhomogeneous medium to be approximated to symmetric coupled lines in a homogeneous medium. Here we gain a theoretical insight into the rationale behind this approximation. The new approach benefits from: 1) a four-port implementation providing two connections to top and bottom plates and 2) a drastic reduction in mathematical complexity without trading off accuracy or compatibility. Circuit and electromagnetic simulations has proven to be in good agreement with measurements of a test structure of electrical length 558deg at 50 GHz |
| doi_str_mv | 10.1109/TMTT.2007.892810 |
| format | Article |
| fullrecord | <record><control><sourceid>proquest_RIE</sourceid><recordid>TN_cdi_ieee_primary_4148096</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4148096</ieee_id><sourcerecordid>2334364111</sourcerecordid><originalsourceid>FETCH-LOGICAL-c383t-c24cfa42187fab1e7edf94be9d147007ac383daebad2ea65ec53be46b9b632303</originalsourceid><addsrcrecordid>eNp9kUFvEzEQhS0EEqHljsTFQqKcNrV3vV77GEWFVkrooQGO1qx3NnHk7gbbqcS_x9tUVOLQ08yTvxnN8yPkA2dzzpm-3Kw3m3nJWDNXulScvSIzXtdNoWXDXpMZY1wVWij2lryLcZ-lqJmakf2Cfh8f0NPF4RBGsDuaRroeO_Ru2NI1JvDFzRCPHtIYikdNl3AA67KO9PYBA_3pINJfLu3ondsOrncWhkSvPNoUcu_pCodt2p2TNz34iO-f6hn58fVqs7wuVrffbpaLVWErVaXClsL2IEqumh5ajg12vRYt6o6LJvuDCesAW-hKBFmjrasWhWx1K6uyYtUZ-XLamw39PmJM5t5Fi97DgOMxGqWYrJXWE3nxIlkJWWv2CH76D9yPxzBkF0ZJwetK6yZD7ATZMMYYsDeH4O4h_DGcmSkjM2VkpozMKaM88vlpL8T8UX2Awbr4PKekzKeqzH08cQ4R_z0LnvPUsvoLHdeatw</addsrcrecordid><sourcetype>Aggregation Database</sourcetype><iscdi>true</iscdi><recordtype>article</recordtype><pqid>864153997</pqid></control><display><type>article</type><title>A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length</title><source>IEEE Electronic Library (IEL)</source><creator>Asahara, M. ; Campbell, C.F. ; Frensley, W.R.</creator><creatorcontrib>Asahara, M. ; Campbell, C.F. ; Frensley, W.R.</creatorcontrib><description>In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, however, face a challenge as a need for a shunt capacitor application arises. This paper is a solution provider, ushering in a new approach to modeling a shunt capacitor of large electrical length over grounding substrate vias. Our model is derived from a set of design equations that allows asymmetric coupled lines in an inhomogeneous medium to be approximated to symmetric coupled lines in a homogeneous medium. Here we gain a theoretical insight into the rationale behind this approximation. The new approach benefits from: 1) a four-port implementation providing two connections to top and bottom plates and 2) a drastic reduction in mathematical complexity without trading off accuracy or compatibility. Circuit and electromagnetic simulations has proven to be in good agreement with measurements of a test structure of electrical length 558deg at 50 GHz</description><identifier>ISSN: 0018-9480</identifier><identifier>EISSN: 1557-9670</identifier><identifier>DOI: 10.1109/TMTT.2007.892810</identifier><identifier>CODEN: IETMAB</identifier><language>eng</language><publisher>New York, NY: IEEE</publisher><subject>Accuracy ; Applied sciences ; Approximation ; Capacitors ; Circuit properties ; Circuit simulation ; Circuit testing ; Computer simulation ; Coupling circuits ; Electric variables measurement ; Electric, optical and optoelectronic circuits ; Electronic equipment and fabrication. Passive components, printed wiring boards, connectics ; Electronics ; Equations ; Exact sciences and technology ; Grounding ; Length measurement ; Mathematical analysis ; Mathematical models ; Metal-insulator structures ; Metal-insulator-metal (MIM) capacitor ; Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits ; MIM capacitors ; Passive components ; Shunt (electrical) ; Shunt capacitors ; Studies ; Testing, measurement, noise and reliability ; Theoretical study. Circuits analysis and design</subject><ispartof>IEEE transactions on microwave theory and techniques, 2007-04, Vol.55 (4), p.709-714</ispartof><rights>2007 INIST-CNRS</rights><rights>Copyright The Institute of Electrical and Electronics Engineers, Inc. (IEEE) 2007</rights><lds50>peer_reviewed</lds50><woscitedreferencessubscribed>false</woscitedreferencessubscribed><citedby>FETCH-LOGICAL-c383t-c24cfa42187fab1e7edf94be9d147007ac383daebad2ea65ec53be46b9b632303</citedby><cites>FETCH-LOGICAL-c383t-c24cfa42187fab1e7edf94be9d147007ac383daebad2ea65ec53be46b9b632303</cites></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4148096$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>314,780,784,796,27924,27925,54758</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4148096$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc><backlink>$$Uhttp://pascal-francis.inist.fr/vibad/index.php?action=getRecordDetail&idt=18666588$$DView record in Pascal Francis$$Hfree_for_read</backlink></links><search><creatorcontrib>Asahara, M.</creatorcontrib><creatorcontrib>Campbell, C.F.</creatorcontrib><creatorcontrib>Frensley, W.R.</creatorcontrib><title>A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length</title><title>IEEE transactions on microwave theory and techniques</title><addtitle>TMTT</addtitle><description>In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, however, face a challenge as a need for a shunt capacitor application arises. This paper is a solution provider, ushering in a new approach to modeling a shunt capacitor of large electrical length over grounding substrate vias. Our model is derived from a set of design equations that allows asymmetric coupled lines in an inhomogeneous medium to be approximated to symmetric coupled lines in a homogeneous medium. Here we gain a theoretical insight into the rationale behind this approximation. The new approach benefits from: 1) a four-port implementation providing two connections to top and bottom plates and 2) a drastic reduction in mathematical complexity without trading off accuracy or compatibility. Circuit and electromagnetic simulations has proven to be in good agreement with measurements of a test structure of electrical length 558deg at 50 GHz</description><subject>Accuracy</subject><subject>Applied sciences</subject><subject>Approximation</subject><subject>Capacitors</subject><subject>Circuit properties</subject><subject>Circuit simulation</subject><subject>Circuit testing</subject><subject>Computer simulation</subject><subject>Coupling circuits</subject><subject>Electric variables measurement</subject><subject>Electric, optical and optoelectronic circuits</subject><subject>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</subject><subject>Electronics</subject><subject>Equations</subject><subject>Exact sciences and technology</subject><subject>Grounding</subject><subject>Length measurement</subject><subject>Mathematical analysis</subject><subject>Mathematical models</subject><subject>Metal-insulator structures</subject><subject>Metal-insulator-metal (MIM) capacitor</subject><subject>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</subject><subject>MIM capacitors</subject><subject>Passive components</subject><subject>Shunt (electrical)</subject><subject>Shunt capacitors</subject><subject>Studies</subject><subject>Testing, measurement, noise and reliability</subject><subject>Theoretical study. Circuits analysis and design</subject><issn>0018-9480</issn><issn>1557-9670</issn><fulltext>true</fulltext><rsrctype>article</rsrctype><creationdate>2007</creationdate><recordtype>article</recordtype><sourceid>RIE</sourceid><recordid>eNp9kUFvEzEQhS0EEqHljsTFQqKcNrV3vV77GEWFVkrooQGO1qx3NnHk7gbbqcS_x9tUVOLQ08yTvxnN8yPkA2dzzpm-3Kw3m3nJWDNXulScvSIzXtdNoWXDXpMZY1wVWij2lryLcZ-lqJmakf2Cfh8f0NPF4RBGsDuaRroeO_Ru2NI1JvDFzRCPHtIYikdNl3AA67KO9PYBA_3pINJfLu3ondsOrncWhkSvPNoUcu_pCodt2p2TNz34iO-f6hn58fVqs7wuVrffbpaLVWErVaXClsL2IEqumh5ajg12vRYt6o6LJvuDCesAW-hKBFmjrasWhWx1K6uyYtUZ-XLamw39PmJM5t5Fi97DgOMxGqWYrJXWE3nxIlkJWWv2CH76D9yPxzBkF0ZJwetK6yZD7ATZMMYYsDeH4O4h_DGcmSkjM2VkpozMKaM88vlpL8T8UX2Awbr4PKekzKeqzH08cQ4R_z0LnvPUsvoLHdeatw</recordid><startdate>20070401</startdate><enddate>20070401</enddate><creator>Asahara, M.</creator><creator>Campbell, C.F.</creator><creator>Frensley, W.R.</creator><general>IEEE</general><general>Institute of Electrical and Electronics Engineers</general><general>The Institute of Electrical and Electronics Engineers, Inc. (IEEE)</general><scope>97E</scope><scope>RIA</scope><scope>RIE</scope><scope>IQODW</scope><scope>AAYXX</scope><scope>CITATION</scope><scope>7SP</scope><scope>8FD</scope><scope>L7M</scope><scope>F28</scope><scope>FR3</scope></search><sort><creationdate>20070401</creationdate><title>A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length</title><author>Asahara, M. ; Campbell, C.F. ; Frensley, W.R.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-c383t-c24cfa42187fab1e7edf94be9d147007ac383daebad2ea65ec53be46b9b632303</frbrgroupid><rsrctype>articles</rsrctype><prefilter>articles</prefilter><language>eng</language><creationdate>2007</creationdate><topic>Accuracy</topic><topic>Applied sciences</topic><topic>Approximation</topic><topic>Capacitors</topic><topic>Circuit properties</topic><topic>Circuit simulation</topic><topic>Circuit testing</topic><topic>Computer simulation</topic><topic>Coupling circuits</topic><topic>Electric variables measurement</topic><topic>Electric, optical and optoelectronic circuits</topic><topic>Electronic equipment and fabrication. Passive components, printed wiring boards, connectics</topic><topic>Electronics</topic><topic>Equations</topic><topic>Exact sciences and technology</topic><topic>Grounding</topic><topic>Length measurement</topic><topic>Mathematical analysis</topic><topic>Mathematical models</topic><topic>Metal-insulator structures</topic><topic>Metal-insulator-metal (MIM) capacitor</topic><topic>Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits</topic><topic>MIM capacitors</topic><topic>Passive components</topic><topic>Shunt (electrical)</topic><topic>Shunt capacitors</topic><topic>Studies</topic><topic>Testing, measurement, noise and reliability</topic><topic>Theoretical study. Circuits analysis and design</topic><toplevel>peer_reviewed</toplevel><toplevel>online_resources</toplevel><creatorcontrib>Asahara, M.</creatorcontrib><creatorcontrib>Campbell, C.F.</creatorcontrib><creatorcontrib>Frensley, W.R.</creatorcontrib><collection>IEEE All-Society Periodicals Package (ASPP) 2005-present</collection><collection>IEEE All-Society Periodicals Package (ASPP) 1998-Present</collection><collection>IEEE Electronic Library (IEL)</collection><collection>Pascal-Francis</collection><collection>CrossRef</collection><collection>Electronics & Communications Abstracts</collection><collection>Technology Research Database</collection><collection>Advanced Technologies Database with Aerospace</collection><collection>ANTE: Abstracts in New Technology & Engineering</collection><collection>Engineering Research Database</collection><jtitle>IEEE transactions on microwave theory and techniques</jtitle></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Asahara, M.</au><au>Campbell, C.F.</au><au>Frensley, W.R.</au><format>journal</format><genre>article</genre><ristype>JOUR</ristype><atitle>A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length</atitle><jtitle>IEEE transactions on microwave theory and techniques</jtitle><stitle>TMTT</stitle><date>2007-04-01</date><risdate>2007</risdate><volume>55</volume><issue>4</issue><spage>709</spage><epage>714</epage><pages>709-714</pages><issn>0018-9480</issn><eissn>1557-9670</eissn><coden>IETMAB</coden><abstract>In monolithic-microwave integrated-circuit design, a metal-insulator-metal (MIM) capacitor is one of the key passive components. Some commonly used MIM capacitor models are optimized for series capacitor applications. These conventional models, however, face a challenge as a need for a shunt capacitor application arises. This paper is a solution provider, ushering in a new approach to modeling a shunt capacitor of large electrical length over grounding substrate vias. Our model is derived from a set of design equations that allows asymmetric coupled lines in an inhomogeneous medium to be approximated to symmetric coupled lines in a homogeneous medium. Here we gain a theoretical insight into the rationale behind this approximation. The new approach benefits from: 1) a four-port implementation providing two connections to top and bottom plates and 2) a drastic reduction in mathematical complexity without trading off accuracy or compatibility. Circuit and electromagnetic simulations has proven to be in good agreement with measurements of a test structure of electrical length 558deg at 50 GHz</abstract><cop>New York, NY</cop><pub>IEEE</pub><doi>10.1109/TMTT.2007.892810</doi><tpages>6</tpages></addata></record> |
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| source | IEEE Electronic Library (IEL) |
| subjects | Accuracy Applied sciences Approximation Capacitors Circuit properties Circuit simulation Circuit testing Computer simulation Coupling circuits Electric variables measurement Electric, optical and optoelectronic circuits Electronic equipment and fabrication. Passive components, printed wiring boards, connectics Electronics Equations Exact sciences and technology Grounding Length measurement Mathematical analysis Mathematical models Metal-insulator structures Metal-insulator-metal (MIM) capacitor Microwave circuits, microwave integrated circuits, microwave transmission lines, submillimeter wave circuits MIM capacitors Passive components Shunt (electrical) Shunt capacitors Studies Testing, measurement, noise and reliability Theoretical study. Circuits analysis and design |
| title | A Novel Approach to Modeling Metal-Insulator-Metal Capacitors Over Vias With Significant Electrical Length |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-03T23%3A02%3A57IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-proquest_RIE&rft_val_fmt=info:ofi/fmt:kev:mtx:journal&rft.genre=article&rft.atitle=A%20Novel%20Approach%20to%20Modeling%20Metal-Insulator-Metal%20Capacitors%20Over%20Vias%20With%20Significant%20Electrical%20Length&rft.jtitle=IEEE%20transactions%20on%20microwave%20theory%20and%20techniques&rft.au=Asahara,%20M.&rft.date=2007-04-01&rft.volume=55&rft.issue=4&rft.spage=709&rft.epage=714&rft.pages=709-714&rft.issn=0018-9480&rft.eissn=1557-9670&rft.coden=IETMAB&rft_id=info:doi/10.1109/TMTT.2007.892810&rft_dat=%3Cproquest_RIE%3E2334364111%3C/proquest_RIE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_pqid=864153997&rft_id=info:pmid/&rft_ieee_id=4148096&rfr_iscdi=true |