Integration of Quantum Dot devices by Selective Area Epitaxy

Integration of Quantum Dot devices by Selective Area Epitaxy

The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO 2 ) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser inte...

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Hauptverfasser: Mokkapati, S., Tan, H.H., Jagadish, C., McBean, K.E., Phillips, M.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Atomic force microscopy
Dielectric substrates
Epitaxial growth
Gallium arsenide
Indium gallium arsenide
Laser theory
Quantum dot lasers
Quantum dots
Quantum well lasers
Transmission electron microscopy
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Zusammenfassung:The results of nucleation of InGaAs and InAs quantum dots by selective area epitaxy are presented. By pre-patterning the substrates with different (SiO 2 ) mask dimensions, the bandgap of the quantum dots can be tuned over a large range. This technique is used to demonstrate a quantum dot laser integrated with a quantum well waveguide
ISSN:2150-3591
2150-3605
DOI:10.1109/ICONN.2006.340648