GaN-On-Si Reliability: A Comparative Study Between Process Platforms

GaN-On-Si Reliability: A Comparative Study Between Process Platforms

GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and...

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Bibliographische Detailangaben
Hauptverfasser: Singhal, S., Chaudhari, A., Hanson, A.W., Johnson, J.W., Therrien, R., Rajagopal, P., Li, T., Park, C., Edwards, A.P., Piner, E.L., Kizilyalli, I.C., Linthicum, K.J.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Annealing
Ceramics
Packaging
Performance evaluation
Qualifications
Radio frequency
Temperature
Testing
Thermal conductivity
Voltage
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Beschreibung
Zusammenfassung:GaN-on-Si transistors are put through an extensive suite of reliability tests in order to accurately assess the drift characteristics of the technology. Data is presented on DC-HTOL, RF-HTOL, and 3-temperature DC tests. In all cases results are compared with the previous generation of technology and reveal improved results. Highlights include an increase in the activation energy from 1.7eV to 2.0eV and a 50% reduction in the 20-year drift rate as predicted by DC-HTOL testing
DOI:10.1109/ROCS.2006.323391