X/Ku Band CMOS LNA Design Techniques

X/Ku Band CMOS LNA Design Techniques

This paper reports two 11 GHz low-noise amplifiers (LNA) in 0.18mum CMOS technology. A cascade two stage LNA achieves 12 dB of power gain, 3.5 dB of noise figure, and an input/output match of -15 dB/-27 dB at 11GHz, while consuming 28mA from 1.8V supply. The second LNA is a modified cascode amplifie...

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Bibliographische Detailangaben
Hauptverfasser: Afshar, B., Niknejad, A.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuits
CMOS technology
Frequency
Gain
Impedance matching
Inductors
Linearity
Microwave devices
Noise figure
USA Councils
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Beschreibung
Zusammenfassung:This paper reports two 11 GHz low-noise amplifiers (LNA) in 0.18mum CMOS technology. A cascade two stage LNA achieves 12 dB of power gain, 3.5 dB of noise figure, and an input/output match of -15 dB/-27 dB at 11GHz, while consuming 28mA from 1.8V supply. The second LNA is a modified cascode amplifier and it achieves 8 dB of gain, 3.1 dB of noise figure, and an input/output match of -12 dB/-15 dB at 11GHz, consuming 18mA from the 1.8V supply. The paper also discusses design considerations such the effects of layout on frequency tuning and noise
ISSN:0886-5930
2152-3630
DOI:10.1109/CICC.2006.320956