Implications of Proximity Effects for Analog Design

Implications of Proximity Effects for Analog Design

This paper addresses two significant proximity effects, well proximity and STI stress, as they relate to analog circuit design. Device performance is impacted by layout features located near, but not part of the device. This adds new complexities to analog design. In either case, bias points can shi...

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Hauptverfasser: Drennan, P.G., Kniffin, M.L., Locascio, D.R.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Analog circuits
CMOS technology
Conductivity
Implants
Mirrors
MOSFET circuits
Protection
Proximity effect
Scattering
Stress
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Beschreibung
Zusammenfassung:This paper addresses two significant proximity effects, well proximity and STI stress, as they relate to analog circuit design. Device performance is impacted by layout features located near, but not part of the device. This adds new complexities to analog design. In either case, bias points can shift by 20-30%, causing potentially catastrophic failures in circuits. We show, for the first time, that a MOSFET placed close to a well-edge creates a graded channel
ISSN:0886-5930
2152-3630
DOI:10.1109/CICC.2006.320869