Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

Highly Reliable Multilevel and 2-bit/cell Operation of Wrapped Select Gate (WSG) SONOS Memory

In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and...

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Veröffentlicht in:IEEE electron device letters 2007-03, Vol.28 (3), p.214-216
Hauptverfasser: WU, Woei-Cherng, CHAO, Tien-Sheng, JHYY CHENG LIOU, PENG, Wu-Chin, YANG, Wen-Luh, WANG, Jer-Chyi, CHEN, Jian-Hao, LAI, Chao-Sung, YANG, Tsung-Yu, LEE, Chien-Hsing, HSIEH, Tsung-Min
Format: Artikel
Sprache:eng
Schlagworte:
Applied sciences
Cameras
Chaos
Charge
Councils
Design. Technologies. Operation analysis. Testing
Devices
Disturbances
Drains
Electronics
Endurance
Exact sciences and technology
Fabrication
Flash memory
Gates
Integrated circuits
Integrated circuits by function (including memories and processors)
Magnetic and optical mass memories
Multilevel
Multilevel operation
Nonvolatile memory
Programming
Semiconductor electronics. Microelectronics. Optoelectronics. Solid state devices
Silicon
Solid state circuits
SONOS devices
source-side injection
Storage and reproduction of information
Voltage
wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS)
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Beschreibung
Zusammenfassung:In this letter, high-performance and reliable wrapped select gate (WSG) polysilicon-oxide-nitride-oxide-silicon (SONOS) memory cells with multilevel and 2-bit/cell operation have been successfully demonstrated. The multilevel storage is easily obtained with fast program/erase speed (10 mus/5 ms) and low programming current (3.5 muA) for our WSG SONOS by a source-side injection. Besides the excellent reliability properties of our multilevel WSG-SONOS memory including unconsidered gate and drain disturbance, long charge retention (>150degC) and good endurance (>10 4 ) are also presented. This novel WSG-SONOS memory with a multilevel and 2-bit/cell operation can be used in future high-density and high-performance memory application
ISSN:0741-3106
1558-0563
DOI:10.1109/LED.2007.891301