Applying fmax, ft, and fmag for Microwave Transistor Designs at Microwave and Millimeter-Wave Frequencies [Application Notes]
Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at f max and G ma extrapolated to unity gives f mag , where f max > f mag > (Vendelin et al., 1990). A similar figure of merit is derived from current gain (|h...
Gespeichert in:
Veröffentlicht in: | IEEE microwave magazine 2007-02, Vol.8 (1), p.84-90 |
---|---|
Hauptverfasser: | , |
Format: | Magazinearticle |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at f max and G ma extrapolated to unity gives f mag , where f max > f mag > (Vendelin et al., 1990). A similar figure of merit is derived from current gain (|h 21 | 2 ) extrapolated to unity, giving the f t of the transistor. It should be recognized the f max is invariant to the common lead, i.e., U cs = U cg = U cd , but this is not true for G ma . Trew and Steer (1986) pointed out the equivalence of F max and f mag based upon an equivalent circuit analysis for the common-source (CS) FET (field-effect transistor) |
---|---|
ISSN: | 1527-3342 1557-9581 |
DOI: | 10.1109/MMW.2007.316274 |