Applying fmax, ft, and fmag for Microwave Transistor Designs at Microwave and Millimeter-Wave Frequencies [Application Notes]

Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at f max and G ma extrapolated to unity gives f mag , where f max > f mag > (Vendelin et al., 1990). A similar figure of merit is derived from current gain (|h...

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Veröffentlicht in:IEEE microwave magazine 2007-02, Vol.8 (1), p.84-90
Hauptverfasser: Vendelin, George D., Shin, Shih-chieh
Format: Magazinearticle
Sprache:eng
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Zusammenfassung:Traditional descriptions of transistor power gains versus frequency lead to the conclusion that Mason's unilateral gain is unity at f max and G ma extrapolated to unity gives f mag , where f max > f mag > (Vendelin et al., 1990). A similar figure of merit is derived from current gain (|h 21 | 2 ) extrapolated to unity, giving the f t of the transistor. It should be recognized the f max is invariant to the common lead, i.e., U cs = U cg = U cd , but this is not true for G ma . Trew and Steer (1986) pointed out the equivalence of F max and f mag based upon an equivalent circuit analysis for the common-source (CS) FET (field-effect transistor)
ISSN:1527-3342
1557-9581
DOI:10.1109/MMW.2007.316274