A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-...

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Bibliographische Detailangaben

Hauptverfasser:	Schmelzer, D., Long, S.I.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance Circuits Class F Frequency Gallium arsenide Gallium nitride GaN HEMT HEMTs Impedance Inverse F Power amplifiers Power generation Voltage
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