A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

A GaN HEMT Class F Amplifier at 2 GHz with > 80 % PAE

A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: Schmelzer, D., Long, S.I.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance
Circuits
Class F
Frequency
Gallium arsenide
Gallium nitride
GaN HEMT
HEMTs
Impedance
Inverse F
Power amplifiers
Power generation
Voltage
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Beschreibung
Zusammenfassung:A Class F amplifier has been designed, fabricated, and tested using a GaN HEMT transistor and a hybrid PCB. The amplifier has a peak PAE of 85 % with an output power of 16.5 W. An output power and drain efficiency tradeoff, dependant on the drain impedance at the fundamental frequency due to the on-state resistance, is explored. A comparison between Class F and inverse F, given particular operating conditions for this device, are made
ISSN:1550-8781
2374-8443
DOI:10.1109/CSICS.2006.319923