A Modular 0.18 um Analog / RFCMOS Technology Comprising 32 GHz FT RF-LDMOS and 40V Complementary MOSFET Devices

A Modular 0.18 um Analog / RFCMOS Technology Comprising 32 GHz FT RF-LDMOS and 40V Complementary MOSFET Devices

High-performance RF-LDMOS, medium voltage (8-12V), and high voltage (20-40V) NLDMOS and PLDMOS devices, integrated in a modular 0.18 mum analog CMOS/RFCMOS technology platform, are described. Device design, process integration, manufacturability, and reliability issues are discussed. These devices a...

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Bibliographische Detailangaben
Hauptverfasser: Lee, Z., Zwingman, R., Jie Zheng, Cai, W., Hurwitz, P., Racanelli, M.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
CMOS analog integrated circuits
CMOS technology
Driver circuits
Energy management
LDMOS
Medium voltage
MOSFET circuits
Power amplifiers
power devices
Process design
Resistors
Silicon
Silicon RF-LDMOS technology
USA Councils
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Beschreibung
Zusammenfassung:High-performance RF-LDMOS, medium voltage (8-12V), and high voltage (20-40V) NLDMOS and PLDMOS devices, integrated in a modular 0.18 mum analog CMOS/RFCMOS technology platform, are described. Device design, process integration, manufacturability, and reliability issues are discussed. These devices are among the highest performance in their class. The successful integration of these devices has enabled us to address our roadmap in the growing wireless, analog, mixed-signal, and power management markets
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2006.311116