Ruggedness Improvement by Protection

Ruggedness Improvement by Protection

Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak vol...

Ausführliche Beschreibung

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Bibliographische Detailangaben
Hauptverfasser: van Bezooijen, A., de Graauw, A., Ruijs, L., Pramm, S., Chanlo, C., ten Dolle, H.J., van Straten, F., Mahmoudi, R., van Roermund, A.H.M.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Adaptive control
avalanche breakdown
Breakdown voltage
Circuits
Detectors
over-voltage protection
Packaging
Power amplifiers
Power generation
Power transistors
Protection
Temperature
Threshold voltage
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Beschreibung
Zusammenfassung:Cellular phone power amplifier transistors have to withstand extreme voltages, temperatures and currents. Requirements on IC and packaging technology are relaxed by using over-voltage and over-temperature protection. To avoid breakdown, protection circuits are used that detect the collector peak voltage and die temperature to limit the output power once a threshold level is crossed. For a supply voltage of 5 V and a nominal output power of 2W, no breakdown is observed for a VSWR of 10 over all phases. For a VSWR of 4 and worst case mismatch phase the maximum die temperature is reduced from 143degC to 112degC when the output power is adaptively reduced from 32.1 dBm to 27.7 dBm
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2006.311174