Development of a Cost-Effective, Selective-Epi, SiGe:C HBT Module for 77GHz Automotive Radar

The development of a selective-epi, SiGe:C HBT module for 77GHz automotive radar applications is described. A cutoff frequency (f T ) of 185GHz, in conjunction with a maximum oscillation frequency of 260GHz has been achieved through the implementation of a self-aligned selective-epi base structure a...

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Hauptverfasser:	John, J.P., Kirchgessner, J., Menner, M., Rueda, H., Chai, F., Morgan, D., Hildreth, J., Dawdy, M., Reuter, R., Hao Li
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Automotive engineering BiCMOS integrated circuits Bipolar transistors Cutoff frequency Germanium silicon alloys Heterojunction bipolar transistors Isolation technology Microwave technology Millimeter wave technology Radar applications SiGe SiGe:C Silicon bipolar/BiCMOS process technology Silicon germanium
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Beschreibung
Zusammenfassung:	The development of a selective-epi, SiGe:C HBT module for 77GHz automotive radar applications is described. A cutoff frequency (f T ) of 185GHz, in conjunction with a maximum oscillation frequency of 260GHz has been achieved through the implementation of a self-aligned selective-epi base structure and a simple, cost-effective collector construction without buried layer or deep trench isolation
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.2006.311149