Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies

Miniaturized Quad-Band Front-End Module for GSM using Si BiCMOS and passive integration technologies

The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrat...

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Bibliographische Detailangaben
Hauptverfasser: de Graauw, A.J.M., van Bezooijen, A., Chanlo, C., den Dekker, A., Dijkhuis, J., Pramm, S., ten Dolle, H.K.J.
Format: Tagungsbericht
Sprache:eng ; jpn
Schlagworte:
analog circuits
BiCMOS
BiCMOS integrated circuits
GSM
Laminates
passive integration
PHEMTs
Power amplifiers
power devices
Power system harmonics
Radio frequency
Radiofrequency amplifiers
RF circuits
Silicon
Silicon bipolar
Switches
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Beschreibung
Zusammenfassung:The paper presents a highly miniaturized front end module (FEM) for GSM. The module consists of pure silicon BiCMOS RF power amplifier (PA) chip, a BiCMOS die for bias/control functions and a pHEMT switch die, all flipped on a passive integration die, which is mounted on an organic laminate substrate. All passives are integrated. Partitioning of passives is optimized to achieve minimum size (6times6times1 mm 3 ) and low cost at acceptable performance. A power added efficiency (PAE) of 35% is demonstrated in the low band (870 MHz) for an output power of 32 dBm with the second harmonic (H2) below -40 dBm and third harmonic (H3) below -45 dBm
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2006.311136