MEMS-Based Reconfigurable Multi-band BiCMOS Power Amplifier

This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm 2 , offers 31dBm with 40% efficiency at 0.9GHz and 30dBm...

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Hauptverfasser:	De Graauw, A.J.M., Steeneken, P.G., Chanlo, C., Dijkhuis, J., Pramm, S., Van Bezooijen, A., ten Dolle, H.K.J., Van Straten, F., Lok, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	BiCMOS BiCMOS integrated circuits Impedance matching MEMS Micromechanical devices Operational amplifiers Power amplifiers Prototypes Radio frequency Radiofrequency amplifiers Reconfigurable Matching Networks RF power amplifier Virtual colonoscopy Voltage
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Beschreibung
Zusammenfassung:	This paper presents a small dual-band 0.9GHz/1.8GHz inverse class F power amplifier with load-switch functionality using a single BiCMOS amplifier line-up with a MEMS based reconfigurable matching network. The realized prototype measures 40mm 2 , offers 31dBm with 40% efficiency at 0.9GHz and 30dBm with 34% at 1.8GHz. The load-switch provides up to 10% efficiency improvement at 0.9GHz for reduced power levels
ISSN:	1088-9299 2378-590X
DOI:	10.1109/BIPOL.2006.311134