Analysis of Temperature Modulation on a SiGe Power Amplifier Non Linearity

Analysis of Temperature Modulation on a SiGe Power Amplifier Non Linearity

The following discussion presents the design and measurements of a power amplifier for a WCDMA handset application on silicon with a STM BiCMOS 0.25mum process. An analysis of the impact of temperature on linearity especially on adjacent channel power regrowth is proposed

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Bibliographische Detailangaben
Hauptverfasser: Leyssenne, L., Pham, J.M., Jarry, P., Kerherve, E., Saias, D.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
BiCMOS process technology
Germanium silicon alloys
Heterojunction bipolar transistors
Linearity
Multiaccess communication
physical thermal dependency
Power amplifiers
Power measurement
Radiofrequency amplifiers
RF power amplifier
SiGe simulation
Silicon germanium
Temperature dependence
Thermal stability
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Beschreibung
Zusammenfassung:The following discussion presents the design and measurements of a power amplifier for a WCDMA handset application on silicon with a STM BiCMOS 0.25mum process. An analysis of the impact of temperature on linearity especially on adjacent channel power regrowth is proposed
ISSN:1088-9299
2378-590X
DOI:10.1109/BIPOL.2006.311130