Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells

A simple technique for monitoring floating gate (FG) charge gain/loss with elementary charge accuracy is proposed. The technique does not require nanoscale FG or low temperature and can be applied to virtually any submicron FG memory cell. The potential applications include precise capacitance measu...

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Bibliographische Detailangaben

Hauptverfasser:	Tkachev, Y., Kotov, A.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Capacitance measurement Charge measurement Current measurement Electrons Event detection Monitoring Nonvolatile memory Stress Temperature distribution Time measurement
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