Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells

Detection of Single-Electron Transfer Events and Capacitance Measurements in Submicron Floating-Gate Memory Cells

A simple technique for monitoring floating gate (FG) charge gain/loss with elementary charge accuracy is proposed. The technique does not require nanoscale FG or low temperature and can be applied to virtually any submicron FG memory cell. The potential applications include precise capacitance measu...

Ausführliche Beschreibung

Gespeichert in:
Bibliographische Detailangaben
Hauptverfasser: Tkachev, Y., Kotov, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Capacitance measurement
Charge measurement
Current measurement
Electrons
Event detection
Monitoring
Nonvolatile memory
Stress
Temperature distribution
Time measurement
Online-Zugang:Volltext bestellen
Tags: Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
Beschreibung
Zusammenfassung:A simple technique for monitoring floating gate (FG) charge gain/loss with elementary charge accuracy is proposed. The technique does not require nanoscale FG or low temperature and can be applied to virtually any submicron FG memory cell. The potential applications include precise capacitance measurements, as well as analysis of program, erase, disturb and data retention characteristics of FG memory cells in extremely low range of FG current (down to 10 -23 A and below)
ISSN:1930-8876
DOI:10.1109/ESSDER.2006.307725