Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM

Investigation of the high temperature stability of TiN-Al2O3-TiN capacitors for sub 50nm deep trench DRAM

This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization...

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Hauptverfasser: Boscke, T., Kudelka, S., Sanger, A., Muller, J., Krautschneider, W.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Aluminum oxide
Annealing
Dielectrics
Electrodes
Leakage current
MIM capacitors
Random access memory
Stability
Temperature
Tin
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Beschreibung
Zusammenfassung:This paper deals with the investigation of mechanisms leading to a degradation of the electrical properties of titanium nitride - aluminum oxide - titanium nitride capacitors at high temperatures. Several degradation mechanisms could be identified by thorough electrical and physical characterization. The findings will serve as a future guide to build thermally stable MIM capacitors
ISSN:1930-8876
DOI:10.1109/ESSDER.2006.307720