Above IC integrated SrTiO3 high K MIM capacitors
This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors
Gespeichert in:
| Hauptverfasser: | , , , , , , , , , , , , |
|---|---|
| Format: | Tagungsbericht |
| Sprache: | eng |
| Schlagworte: | |
| Online-Zugang: | Volltext bestellen |
| Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
| container_end_page | 189 |
|---|---|
| container_issue | |
| container_start_page | 186 |
| container_title | |
| container_volume | |
| creator | Defay, E. Wolozan, D. Garrec, P. Andre, B. Ulmer, L. Aid, M. Blanc, J.-P. Serret, E. Delpech, P. Giraudin, J.-C. Guillan, J. Pellissier, D. Ancey, P. |
| description | This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors |
| doi_str_mv | 10.1109/ESSDER.2006.307669 |
| format | Conference Proceeding |
| fullrecord | <record><control><sourceid>ieee_6IE</sourceid><recordid>TN_cdi_ieee_primary_4099887</recordid><sourceformat>XML</sourceformat><sourcesystem>PC</sourcesystem><ieee_id>4099887</ieee_id><sourcerecordid>4099887</sourcerecordid><originalsourceid>FETCH-LOGICAL-i219t-3c03d14378cb31371bc507a7cf90c5e25452b0d947baaf9a8891c0e5c298609f3</originalsourceid><addsrcrecordid>eNotj8tKw0AUQAe0YG37A7qZH0i8M3ded1lirMGWgqnrMplM2hG1JQmCf29Bz-bsDhzG7gTkQgA9lHX9WL7mEsDkCNYYumK3QkmlAEGoazYVhJA5Z80NWwzDO1xQWqEyUwbL5vQdeVXw9DXGQ-_H2PK636Ut8mM6HPkL31QbHvzZhzSe-mHOJp3_GOLi3zP29lTuiudsvV1VxXKdJSlozDAAtkKhdaFBgVY0QYP1NnQEQUeplZYNtKRs431H3jkSAaIOkpwB6nDG7v-6Kca4P_fp0_c_ewVElxH8BcpsQeI</addsrcrecordid><sourcetype>Publisher</sourcetype><iscdi>true</iscdi><recordtype>conference_proceeding</recordtype></control><display><type>conference_proceeding</type><title>Above IC integrated SrTiO3 high K MIM capacitors</title><source>IEEE Electronic Library (IEL) Conference Proceedings</source><creator>Defay, E. ; Wolozan, D. ; Garrec, P. ; Andre, B. ; Ulmer, L. ; Aid, M. ; Blanc, J.-P. ; Serret, E. ; Delpech, P. ; Giraudin, J.-C. ; Guillan, J. ; Pellissier, D. ; Ancey, P.</creator><creatorcontrib>Defay, E. ; Wolozan, D. ; Garrec, P. ; Andre, B. ; Ulmer, L. ; Aid, M. ; Blanc, J.-P. ; Serret, E. ; Delpech, P. ; Giraudin, J.-C. ; Guillan, J. ; Pellissier, D. ; Ancey, P.</creatorcontrib><description>This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors</description><identifier>ISSN: 1930-8876</identifier><identifier>ISBN: 1424403014</identifier><identifier>ISBN: 9781424403011</identifier><identifier>DOI: 10.1109/ESSDER.2006.307669</identifier><language>eng</language><publisher>IEEE</publisher><subject>Annealing ; Capacitance ; Crystallization ; Dielectric constant ; Dielectric materials ; Ferroelectric materials ; High K dielectric materials ; High-K gate dielectrics ; MIM capacitors ; Sputtering</subject><ispartof>2006 European Solid-State Device Research Conference, 2006, p.186-189</ispartof><oa>free_for_read</oa><woscitedreferencessubscribed>false</woscitedreferencessubscribed></display><links><openurl>$$Topenurl_article</openurl><openurlfulltext>$$Topenurlfull_article</openurlfulltext><thumbnail>$$Tsyndetics_thumb_exl</thumbnail><linktohtml>$$Uhttps://ieeexplore.ieee.org/document/4099887$$EHTML$$P50$$Gieee$$H</linktohtml><link.rule.ids>309,310,776,780,785,786,2052,27902,54895</link.rule.ids><linktorsrc>$$Uhttps://ieeexplore.ieee.org/document/4099887$$EView_record_in_IEEE$$FView_record_in_$$GIEEE</linktorsrc></links><search><creatorcontrib>Defay, E.</creatorcontrib><creatorcontrib>Wolozan, D.</creatorcontrib><creatorcontrib>Garrec, P.</creatorcontrib><creatorcontrib>Andre, B.</creatorcontrib><creatorcontrib>Ulmer, L.</creatorcontrib><creatorcontrib>Aid, M.</creatorcontrib><creatorcontrib>Blanc, J.-P.</creatorcontrib><creatorcontrib>Serret, E.</creatorcontrib><creatorcontrib>Delpech, P.</creatorcontrib><creatorcontrib>Giraudin, J.-C.</creatorcontrib><creatorcontrib>Guillan, J.</creatorcontrib><creatorcontrib>Pellissier, D.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><title>Above IC integrated SrTiO3 high K MIM capacitors</title><title>2006 European Solid-State Device Research Conference</title><addtitle>ESSDER</addtitle><description>This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors</description><subject>Annealing</subject><subject>Capacitance</subject><subject>Crystallization</subject><subject>Dielectric constant</subject><subject>Dielectric materials</subject><subject>Ferroelectric materials</subject><subject>High K dielectric materials</subject><subject>High-K gate dielectrics</subject><subject>MIM capacitors</subject><subject>Sputtering</subject><issn>1930-8876</issn><isbn>1424403014</isbn><isbn>9781424403011</isbn><fulltext>true</fulltext><rsrctype>conference_proceeding</rsrctype><creationdate>2006</creationdate><recordtype>conference_proceeding</recordtype><sourceid>6IE</sourceid><sourceid>RIE</sourceid><recordid>eNotj8tKw0AUQAe0YG37A7qZH0i8M3ded1lirMGWgqnrMplM2hG1JQmCf29Bz-bsDhzG7gTkQgA9lHX9WL7mEsDkCNYYumK3QkmlAEGoazYVhJA5Z80NWwzDO1xQWqEyUwbL5vQdeVXw9DXGQ-_H2PK636Ut8mM6HPkL31QbHvzZhzSe-mHOJp3_GOLi3zP29lTuiudsvV1VxXKdJSlozDAAtkKhdaFBgVY0QYP1NnQEQUeplZYNtKRs431H3jkSAaIOkpwB6nDG7v-6Kca4P_fp0_c_ewVElxH8BcpsQeI</recordid><startdate>20060101</startdate><enddate>20060101</enddate><creator>Defay, E.</creator><creator>Wolozan, D.</creator><creator>Garrec, P.</creator><creator>Andre, B.</creator><creator>Ulmer, L.</creator><creator>Aid, M.</creator><creator>Blanc, J.-P.</creator><creator>Serret, E.</creator><creator>Delpech, P.</creator><creator>Giraudin, J.-C.</creator><creator>Guillan, J.</creator><creator>Pellissier, D.</creator><creator>Ancey, P.</creator><general>IEEE</general><scope>6IE</scope><scope>6IL</scope><scope>CBEJK</scope><scope>RIE</scope><scope>RIL</scope></search><sort><creationdate>20060101</creationdate><title>Above IC integrated SrTiO3 high K MIM capacitors</title><author>Defay, E. ; Wolozan, D. ; Garrec, P. ; Andre, B. ; Ulmer, L. ; Aid, M. ; Blanc, J.-P. ; Serret, E. ; Delpech, P. ; Giraudin, J.-C. ; Guillan, J. ; Pellissier, D. ; Ancey, P.</author></sort><facets><frbrtype>5</frbrtype><frbrgroupid>cdi_FETCH-LOGICAL-i219t-3c03d14378cb31371bc507a7cf90c5e25452b0d947baaf9a8891c0e5c298609f3</frbrgroupid><rsrctype>conference_proceedings</rsrctype><prefilter>conference_proceedings</prefilter><language>eng</language><creationdate>2006</creationdate><topic>Annealing</topic><topic>Capacitance</topic><topic>Crystallization</topic><topic>Dielectric constant</topic><topic>Dielectric materials</topic><topic>Ferroelectric materials</topic><topic>High K dielectric materials</topic><topic>High-K gate dielectrics</topic><topic>MIM capacitors</topic><topic>Sputtering</topic><toplevel>online_resources</toplevel><creatorcontrib>Defay, E.</creatorcontrib><creatorcontrib>Wolozan, D.</creatorcontrib><creatorcontrib>Garrec, P.</creatorcontrib><creatorcontrib>Andre, B.</creatorcontrib><creatorcontrib>Ulmer, L.</creatorcontrib><creatorcontrib>Aid, M.</creatorcontrib><creatorcontrib>Blanc, J.-P.</creatorcontrib><creatorcontrib>Serret, E.</creatorcontrib><creatorcontrib>Delpech, P.</creatorcontrib><creatorcontrib>Giraudin, J.-C.</creatorcontrib><creatorcontrib>Guillan, J.</creatorcontrib><creatorcontrib>Pellissier, D.</creatorcontrib><creatorcontrib>Ancey, P.</creatorcontrib><collection>IEEE Electronic Library (IEL) Conference Proceedings</collection><collection>IEEE Proceedings Order Plan All Online (POP All Online) 1998-present by volume</collection><collection>IEEE Xplore All Conference Proceedings</collection><collection>IEEE Electronic Library (IEL)</collection><collection>IEEE Proceedings Order Plans (POP All) 1998-Present</collection></facets><delivery><delcategory>Remote Search Resource</delcategory><fulltext>fulltext_linktorsrc</fulltext></delivery><addata><au>Defay, E.</au><au>Wolozan, D.</au><au>Garrec, P.</au><au>Andre, B.</au><au>Ulmer, L.</au><au>Aid, M.</au><au>Blanc, J.-P.</au><au>Serret, E.</au><au>Delpech, P.</au><au>Giraudin, J.-C.</au><au>Guillan, J.</au><au>Pellissier, D.</au><au>Ancey, P.</au><format>book</format><genre>proceeding</genre><ristype>CONF</ristype><atitle>Above IC integrated SrTiO3 high K MIM capacitors</atitle><btitle>2006 European Solid-State Device Research Conference</btitle><stitle>ESSDER</stitle><date>2006-01-01</date><risdate>2006</risdate><spage>186</spage><epage>189</epage><pages>186-189</pages><issn>1930-8876</issn><isbn>1424403014</isbn><isbn>9781424403011</isbn><abstract>This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors</abstract><pub>IEEE</pub><doi>10.1109/ESSDER.2006.307669</doi><tpages>4</tpages><oa>free_for_read</oa></addata></record> |
| fulltext | fulltext_linktorsrc |
| identifier | ISSN: 1930-8876 |
| ispartof | 2006 European Solid-State Device Research Conference, 2006, p.186-189 |
| issn | 1930-8876 |
| language | eng |
| recordid | cdi_ieee_primary_4099887 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Annealing Capacitance Crystallization Dielectric constant Dielectric materials Ferroelectric materials High K dielectric materials High-K gate dielectrics MIM capacitors Sputtering |
| title | Above IC integrated SrTiO3 high K MIM capacitors |
| url | https://sfx.bib-bvb.de/sfx_tum?ctx_ver=Z39.88-2004&ctx_enc=info:ofi/enc:UTF-8&ctx_tim=2025-01-29T14%3A27%3A49IST&url_ver=Z39.88-2004&url_ctx_fmt=infofi/fmt:kev:mtx:ctx&rfr_id=info:sid/primo.exlibrisgroup.com:primo3-Article-ieee_6IE&rft_val_fmt=info:ofi/fmt:kev:mtx:book&rft.genre=proceeding&rft.atitle=Above%20IC%20integrated%20SrTiO3%20high%20K%20MIM%20capacitors&rft.btitle=2006%20European%20Solid-State%20Device%20Research%20Conference&rft.au=Defay,%20E.&rft.date=2006-01-01&rft.spage=186&rft.epage=189&rft.pages=186-189&rft.issn=1930-8876&rft.isbn=1424403014&rft.isbn_list=9781424403011&rft_id=info:doi/10.1109/ESSDER.2006.307669&rft_dat=%3Cieee_6IE%3E4099887%3C/ieee_6IE%3E%3Curl%3E%3C/url%3E&disable_directlink=true&sfx.directlink=off&sfx.report_link=0&rft_id=info:oai/&rft_id=info:pmid/&rft_ieee_id=4099887&rfr_iscdi=true |