Above IC integrated SrTiO3 high K MIM capacitors

This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors

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Bibliographische Detailangaben
Hauptverfasser:	Defay, E., Wolozan, D., Garrec, P., Andre, B., Ulmer, L., Aid, M., Blanc, J.-P., Serret, E., Delpech, P., Giraudin, J.-C., Guillan, J., Pellissier, D., Ancey, P.
Format:	Tagungsbericht
Sprache:	eng
Schlagworte:	Annealing Capacitance Crystallization Dielectric constant Dielectric materials Ferroelectric materials High K dielectric materials High-K gate dielectrics MIM capacitors Sputtering
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Beschreibung
Zusammenfassung:	This paper describes realization and characterization of SrTiO 3 (STO) high k MIM capacitors above BiCMOS integrated circuit (IC). These capacitances are connected to IC and are used as coupling capacitors
ISSN:	1930-8876
DOI:	10.1109/ESSDER.2006.307669