Multi-Gate MOSFET Design

In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic...

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Hauptverfasser: Knoblinger, G., Pacha, C., Kuttner, F., Marshall, A., Russ, C., Haibach, P., Patruno, P., Schulz, T., Arnim, K.V., Engelstaedter, J.P., Bertolissi, L., Xiong, W., Cleavelin, C.R., Schruefer, K.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:In this paper, circuit design issues of emerging multi-gate field effect transistors (MuGFET) are discussed with special emphasis on the link between circuit design and technology. The influence of novel midgap gate electrode materials on digital circuits is presented and examples of the first basic analog building blocks realized with these advanced devices are shown. Furthermore the influence of new device specific effects on analog circuits, like self heating or output conductance improvement due to undoped body are discussed and RF and ESD issues are covered
ISSN:1930-8876
DOI:10.1109/ESSDER.2006.307639