CMOS Single-Photon Avalanche Diode Array for Time-Resolved Fluorescence Detection

CMOS Single-Photon Avalanche Diode Array for Time-Resolved Fluorescence Detection

A single photon avalanche diode detector for the analysis of fluorescence phenomena is presented. The 14-pixels array, fabricated in a conventional high voltage 0.35-mum CMOS technology, allows measuring photon densities as low as 10 8 photons/cm 2 s. Each 180times150-mum 2 pixel integrates a single...

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Bibliographische Detailangaben
Hauptverfasser: Mosconi, D., Stoppa, D., Pancheri, L., Gonzo, L., Simoni, A.
Format: Tagungsbericht
Sprache:eng
Schlagworte:
CMOS technology
Diodes
Envelope detectors
Fluorescence
Integrated circuit measurements
Phased arrays
Photonics
Programmable logic arrays
Pulse measurements
Semiconductor device measurement
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Beschreibung
Zusammenfassung:A single photon avalanche diode detector for the analysis of fluorescence phenomena is presented. The 14-pixels array, fabricated in a conventional high voltage 0.35-mum CMOS technology, allows measuring photon densities as low as 10 8 photons/cm 2 s. Each 180times150-mum 2 pixel integrates a single photon avalanche diode combined with an active quenching circuit and a 17-bit digital events counter. On chip master logic provides the digital control phases required by the pixel array with a full programmability of the main timing synchronisms. Time-resolved measurements has been demonstrated by detecting a 10ns, 10pW (peak-power on the pixel) light pulse with a typical resolution of 80ps
ISSN:1930-8833
2643-1319
DOI:10.1109/ESSCIR.2006.307487