A 150mA Low Noise, High PSRR Low-Dropout Linear Regulator in 0.13μm Technology for RF SoC Applications
An integrated low-noise, high power supply rejection ratio (PSRR), low-dropout (LDO) linear regulator has been developed in Texas Instruments' (TI) 130nm CMOS technology. The LDO regulator is capable of producing a regulated output voltage of 2.8 V from a Li-ion battery supply, with a dropout v...
Gespeichert in:
Hauptverfasser: | , |
---|---|
Format: | Tagungsbericht |
Sprache: | eng |
Schlagworte: | |
Online-Zugang: | Volltext bestellen |
Tags: |
Tag hinzufügen
Keine Tags, Fügen Sie den ersten Tag hinzu!
|
Zusammenfassung: | An integrated low-noise, high power supply rejection ratio (PSRR), low-dropout (LDO) linear regulator has been developed in Texas Instruments' (TI) 130nm CMOS technology. The LDO regulator is capable of producing a regulated output voltage of 2.8 V from a Li-ion battery supply, with a dropout voltage of 200 mV while supplying a load current of 150 mA. The LDO regulator features > 65 dB PSRR at 20 kHz, and > 40 dB up to 1 MHz. The LDO regulator also features output noise performance of < 350 nV rms /radicHz at 100Hz. The LDO die area is 0.166 mm 2 and the maximum no-load power consumption is 450μW. |
---|---|
ISSN: | 1930-8833 2643-1319 |
DOI: | 10.1109/ESSCIR.2006.307507 |