A 150mA Low Noise, High PSRR Low-Dropout Linear Regulator in 0.13μm Technology for RF SoC Applications

An integrated low-noise, high power supply rejection ratio (PSRR), low-dropout (LDO) linear regulator has been developed in Texas Instruments' (TI) 130nm CMOS technology. The LDO regulator is capable of producing a regulated output voltage of 2.8 V from a Li-ion battery supply, with a dropout v...

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Bibliographische Detailangaben
Hauptverfasser: Kae Wong, Evans, D.
Format: Tagungsbericht
Sprache:eng
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Zusammenfassung:An integrated low-noise, high power supply rejection ratio (PSRR), low-dropout (LDO) linear regulator has been developed in Texas Instruments' (TI) 130nm CMOS technology. The LDO regulator is capable of producing a regulated output voltage of 2.8 V from a Li-ion battery supply, with a dropout voltage of 200 mV while supplying a load current of 150 mA. The LDO regulator features > 65 dB PSRR at 20 kHz, and > 40 dB up to 1 MHz. The LDO regulator also features output noise performance of < 350 nV rms /radicHz at 100Hz. The LDO die area is 0.166 mm 2 and the maximum no-load power consumption is 450μW.
ISSN:1930-8833
2643-1319
DOI:10.1109/ESSCIR.2006.307507