Radiation Hardened 128K PDSOI CMOS Static RAM
A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10 11 rad (Si)/s dose rate surv...
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| creator | Zhao Kai Liu Zhongli Yu Fang Xiao Zhiqiang Hong Genshen |
| description | A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10 11 rad (Si)/s dose rate survivability. The circuit operates with ambient temperature from -25 to +125degC and power supply from 4.5 to 5.5V. A 28-pin dual-in-line flat pack package is used |
| doi_str_mv | 10.1109/ICSICT.2006.306507 |
| format | Conference Proceeding |
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| identifier | ISBN: 9781424401604 |
| ispartof | 2006 8th International Conference on Solid-State and Integrated Circuit Technology Proceedings, 2006, p.1922-1924 |
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| language | eng |
| recordid | cdi_ieee_primary_4098581 |
| source | IEEE Electronic Library (IEL) Conference Proceedings |
| subjects | Circuit simulation CMOS technology Decoding Energy consumption Radiation hardening Random access memory Read-write memory Silicon on insulator technology Testing Voltage |
| title | Radiation Hardened 128K PDSOI CMOS Static RAM |
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