Radiation Hardened 128K PDSOI CMOS Static RAM

Radiation Hardened 128K PDSOI CMOS Static RAM

A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10 11 rad (Si)/s dose rate surv...

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Bibliographische Detailangaben
Hauptverfasser: Zhao Kai, Liu Zhongli, Yu Fang, Xiao Zhiqiang, Hong Genshen
Format: Tagungsbericht
Sprache:eng
Schlagworte:
Circuit simulation
CMOS technology
Decoding
Energy consumption
Radiation hardening
Random access memory
Read-write memory
Silicon on insulator technology
Testing
Voltage
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Beschreibung
Zusammenfassung:A fast 128K-bit asynchronous SRAM with access time of 25 ns is presented. It used a radiation hardened 0.8-micron CMOS/SOI process with 3 layers of metal. It features 500 muA stand-by current, 20mA@10MHz operating current, 500K rad(Si) total dose tolerant and 2.45times10 11 rad (Si)/s dose rate survivability. The circuit operates with ambient temperature from -25 to +125degC and power supply from 4.5 to 5.5V. A 28-pin dual-in-line flat pack package is used
DOI:10.1109/ICSICT.2006.306507